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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2007    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode 期刊论文 applied optics, 2007, 卷号: 46, 期号: 28, 页码: 7035-7039 Yang Z (Yang Zhi); Chang B (Chang Benkang); Zou J (Zou Jijun); Qiao J (Qiao Jianliang); Gao P (Gao Pin); Zeng Y (Zeng Yiping); Li H (Li Hui) 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/29 ACTIVATED GAAS   Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409 Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin) 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY   Design, fabrication, and characterization of an ultracompact low-loss photonic crystal corner mirror 期刊论文 ieee journal of quantum electronics, 2007, 卷号: 43, 期号: 9-10, 页码: 876-883 Yu HJ (Yu Hejun); Yu JZ (Yu Jinzhong); Yu Y (Yu Yude); Fan ZC (Fan Zhong-Chao); Chen SW (Chen Shaowu) 收藏  |  浏览/下载：100/0  |  提交时间：2010/03/29 corner mirror   Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013 Zhang PF (Zhang, P. F.); Liu XL (Liu, X. L.); Wei HY (Wei, H. Y.); Fan HB (Fan, H. B.); Liang ZM (Liang, Z. M.); Jin P (Jin, P.); Yang SY (Yang, S. Y.); Jiao CM (Jiao, C. M.); Zhu QS (Zhu, Q. S.); Wang ZG (Wang, Z. G.) 收藏  |  浏览/下载：21/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 12, 页码: 3543-3546 Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：44/1  |  提交时间：2010/03/08 LAYERS  SURFACTANT  SUBSTRATE  HEMT  SB   Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers 期刊论文 modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866 Sun, J; Zhou, DY; Li, RY; Zhao, C; Ye, XL; Xu, B; Chen, YH; Wang, ZG 收藏  |  浏览/下载：65/5  |  提交时间：2010/03/08 III-V semiconductors  quantum dots  scanning electron microscopy  selective etching