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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2007    学科主题：光电子学    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914 Liu W; Zhu JJ; Jiang S; Yang H; Wang JF 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文 materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419 Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui) 收藏  |  浏览/下载：41/0  |  提交时间：2010/03/29 chemical vapor deposition   Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912 Yang T (Yang, Tao); Tatebayashi J (Tatebayashi, Jun); Aoki K (Aoki, Kanna); Nishioka M (Nishioka, Masao); Arakawa Y (Arakawa, Yasuhiko) 收藏  |  浏览/下载：57/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Effect of heavy boron doping on the electrical characteristics of SiGeHBTs 期刊论文 semiconductor science and technology, 2007, 卷号: 22, 期号: 8, 页码: 890-895 Yao F (Yao Fei); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming) 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/29 HETEROJUNCTION BIPOLAR-TRANSISTORS   Temperature dependence of absorption edge in MOCVD grown GaN 期刊论文 journal of materials science-materials in electronics, 2007, 卷号: 18, 期号: 12, 页码: 1229-1233 Majid A (Majid Abdul); Ali A (Ali Akbar); Zhu JJ (Zhu Jianjun) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION