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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2006    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文 journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497 Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：85/0  |  提交时间：2010/04/11 photoluminescence  molecular beam epitaxy  quantum wells  nitrides  semiconducting III-V materials  IMPROVED LUMINESCENCE EFFICIENCY  LASER-DIODES  TEMPERATURE  SURFACTANT  EMISSION  NITROGEN  ORIGIN   Efficiently producing single-walled carbon nanotube rings and investigation of their field emission properties 期刊论文 nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2355-2361 Song L (Song Li); Ci LJ (Ci Lijie); Jin CH (Jin Chuanhong); Tan PH (Tan Pingheng); Sun LF (Sun Lianfeng); Ma WJ (Ma Wenjun); Liu LF (Liu Lifeng); Liu DF (Liu Dongfang); Zhang ZX (Zhang Zengxing); Xiang YJ (Xiang Yanjuan); Luo SD (Luo Shudong); Zhao XW (Zhao Xiaowei); Shen J (Shen Jun); Zhou JJ (Zhou Jianjun); Zhou WY (Zhou Weiya); Xie SS (Xie Sishen) 收藏  |  浏览/下载：67/0  |  提交时间：2010/04/11 DIAMETER DISTRIBUTION  ELECTRONIC-PROPERTIES  GROWTH  HYDROCARBONS  TEMPERATURE   Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008 作者:  Yang XH 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 LASERS  TEMPERATURE  PHOTOLUMINESCENCE   Interplay between s-d exchange interaction and Rashba effect: Spin-polarized transport 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 13, 页码: art.no.132112 Yang W (Yang W.); Chang K (Chang Kai); Wu XG (Wu X. G.); Zheng HZ (Zheng H. Z.); Peeters FM (Peeters F. M.) 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 INJECTION  HETEROSTRUCTURE  SEMICONDUCTORS  TEMPERATURE   Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文 journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 40529 作者:  Wu DH;  Niu ZC;  Jiang DS;  Xu YQ 收藏  |  浏览/下载：81/0  |  提交时间：2010/04/11 molecular beam epitaxy  quantum wells  semiconducting III-V materials  MU-M  LASERS  TEMPERATURE  SURFACTANT  NM   Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires 期刊论文 nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145 Gong Z; Niu ZC; Fang ZD 收藏  |  浏览/下载：72/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  QUANTUM-DOT SUPERLATTICES  VICINAL GAAS(001)  GAAS  WIRES  POLARIZATION  GROWTH  WELLS  TEMPERATURE  MECHANISM