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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2006    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  PHOTOLUMINESCENCE SPECTRA  HEMTS   Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682 Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11 HEMT  heterojunction  two dimentional electron gas  self-consistent calculation  FIELD-EFFECT TRANSISTOR  TRANSPORT-PROPERTIES  QUANTUM-WELLS  HEMTS  FREQUENCY  DENSITY   Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383 Shu Q; Shu YC; Zhang GJ; Liu RB; Yao JH; Pi B; Xing XD; Lin YW; Xu JJ; Wang ZG 收藏  |  浏览/下载：65/0  |  提交时间：2010/04/11 two-dimensional electron gas  quantum Hall effect  SdH oscillations  persistent photoconductivity  HETEROSTRUCTURES  ALXGA1-XAS  SCATTERING  LIFETIME  MOBILITY  GAAS  TE