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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2001    学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN   Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文 9th international conference on high pressure semiconductor physics (hpsp9), sapporo, japan, sep 24-28, 2000 Li GH; Chen Y; Fung ZL; Ding K; Han HX; Zhou W; Wang ZG 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15 HYDROSTATIC-PRESSURE  PHOTOLUMINESCENCE  GAAS  LUMINESCENCE  GROWTH  INSB  GASB   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Jiang DS 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN