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| Residual donors in undoped LEC InP 会议论文
11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000
Zhao YW; Sun NF; Sun TN; Lin LY; Wu XW; Guo WL; Wu X; Bi KY
  收藏 | 浏览/下载：15/0 | 提交时间：2010/10/29
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| Tentative analysis of Swirl defects in silicon crystals 期刊论文
journal of crystal growth, 2000, 卷号: 213, 期号: 3-4, 页码: 276-282
Fan TW; Qian JJ; Wu J; Lin LY; Yuan J
收藏 | 浏览/下载：80/0 | 提交时间：2010/08/12
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| The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363
作者: Ye XL ; Xu B
收藏 | 浏览/下载：50/0 | 提交时间：2010/08/12
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| X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH
收藏 | 浏览/下载：48/0 | 提交时间：2010/08/12
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| Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 791-794
Zhuang QD; Li JM; Wang XX; Zeng YP; Wang YT; Wang BQ; Pan L; Wu J; Kong MY; Lin LY
收藏 | 浏览/下载：56/0 | 提交时间：2010/08/12
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| Influence of precipitates on GaN epilayer quality 期刊论文
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 214-217
Kang JY; Huang QS; Wang ZG
收藏 | 浏览/下载：47/0 | 提交时间：2010/08/12
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| Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe 期刊论文
journal of crystal growth, 2000, 卷号: 213, 期号: 3-4, 页码: 308-311
Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM
收藏 | 浏览/下载：49/0 | 提交时间：2010/08/12
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| Influence of precipitates on GaN epilayer quality 会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY; Huang QS; Wang ZG
收藏 | 浏览/下载：11/0 | 提交时间：2010/11/15
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| Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
Liu JP; Huang DD; Li JP; Lin YX; Sun DZ; Kong MY
收藏 | 浏览/下载：70/14 | 提交时间：2010/08/12
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| Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232
Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M
收藏 | 浏览/下载：45/0 | 提交时间：2010/08/12
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