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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：1996    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice 期刊论文 electronics letters, 1996, 卷号: 32, 期号: 18, 页码: 1726-1727 Pan D; Zeng YP; Kong MY; Wu J; Zhu YQ; Zhang CH; Li JM; Wang CY 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/17 infrared detectors  semiconductor quantum dots  semiconductor superlattices   New observation on the formation of PbS clusters in zeolite-Y 期刊论文 applied physics letters, 1996, 卷号: 68, 期号: 14, 页码: 1990-1992 Chen W; Wang ZG; Lin ZJ; Qian JJ; Lin LY 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/17 OPTICAL-PROPERTIES  SEMICONDUCTOR PARTICLES  CDS SUPERCLUSTERS  ELECTRON-TRANSFER  PHOTOLUMINESCENCE  PHOTOCHEMISTRY  COLLOIDS  SULFIDE  METAL   Photoluminescence and activation on SI-GaAs by Si+ implantation and following rapid thermal annealing 期刊论文 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1996, 卷号: 117, 期号: 0, 页码: 112-116 Li GH; Wang CH; Zhao J; Wang ZG; Wan SK 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/17 EFFICIENCY   Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface by rapid thermal annealing 期刊论文 applied surface science, 1996, 卷号: 100, 期号: 0, 页码: 592-595 Chen WD; Li XQ; Duan LH; Xie XL; Cui YD 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/17 Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates 期刊论文 journal of photochemistry and photobiology a-chemistry, 1996, 卷号: 101, 期号: 0, 页码: 113-117 Liu Y; Xiao XR; Li XP; Xu ZY; Yuan ZL; Zeng YP; Yang CH; Sun DZ 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/17 chemical adsorption  multiquantum well  photoluminescence  POROUS SILICON  GAAS  HETEROSTRUCTURES  PASSIVATION  ABSORPTION  ENERGY  CELL   Growth of GaAs on Si by using a thin Si film as buffer layer 期刊论文 chinese physics letters, 1996, 卷号: 13, 期号: 1, 页码: 42-45 Hao MS; Liang JW; Jing XJ; Wang YT; Deng LS; Xiao ZB; Zheng LX; Hu XW 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/17 MOLECULAR-BEAM EPITAXY  ON-SI   Photoluminescence of GaInP under high pressure 期刊论文 journal of applied physics, 1996, 卷号: 79, 期号: 9, 页码: 7177-7182 Dong JR; Li GH; Wang ZG; Lu DC; Liu XL; Li XB; Sun DZ; Kong MY; Wang ZJ 收藏  |  浏览/下载：24/0  |  提交时间：2010/11/17 VAPOR-PHASE EPITAXY  HYDROSTATIC-PRESSURE  ORDERED GA0.5IN0.5P  GROWTH TEMPERATURE  DEPENDENCE  GAP  SPECTRUM  ENERGY   Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure 期刊论文 applied physics letters, 1996, 卷号: 68, 期号: 12, 页码: 1711-1713 Dong JR; Wang ZG; Lu DC; Liu XL; Li XB; Sun DZ; Wang ZJ; Kong MY; Li GH 收藏  |  浏览/下载：9/0  |  提交时间：2010/11/17 VAPOR-PHASE EPITAXY  GA0.5IN0.5P  DEPENDENCE  SPECTRUM  ENERGY  GROWTH