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REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING 期刊论文
journal of applied physics, 1992, 卷号: 71, 期号: 10, 页码: 4843-4847
XIAO GM; YIN SD; ZHANG JP; DONG AH; ZHU PR; LIU JR
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