Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry

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	Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry
	Huang, Qiuping 1,2; Li, Bincheng 1; Gao, Weidong 1
刊名	INTERNATIONAL JOURNAL OF THERMOPHYSICS
	2012-11-01
卷号	33 期号:10-11 页码:2082-2088
关键词	Ion implantation Photocarrier radiometry Silicon Spectroscopic ellipsometry Ultra-shallow junction
英文摘要	Photocarrier radiometry (PCR) and spectroscopic ellipsometry (SE) techniques were employed to measure ultra-shallow junction (USJ) wafers. These USJ wafers were prepared by As+ ion implantation at energies of 0.5 keV to 5 keV, at a dose of 1 x 10(15) As+/cm(2) and spike annealing. The experimental data showed that the PCR signal versus implantation energy exhibits a monotonic behavior. The damaged layer of the as-implanted wafer and the recrystallization and activation of the post-annealed wafer were evaluated by SE in the spectral range from 0.27 mu m to 20 mu m. PCR and SE were shown to provide non-destructive metrology tools for process monitoring in USJ fabrication.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
研究领域[WOS]	Thermodynamics ; Chemistry ; Mechanics ; Physics
收录类别	SCI ; ISTP
语种	英语
WOS记录号	WOS:000312072300046
公开日期	2015-12-24
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/2371]
专题	光电技术研究所_光电技术研究所被WoS收录文章
作者单位	1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Huang, Qiuping,Li, Bincheng,Gao, Weidong. Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2012,33(10-11):2082-2088.
APA	Huang, Qiuping,Li, Bincheng,&Gao, Weidong.(2012).Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry.INTERNATIONAL JOURNAL OF THERMOPHYSICS,33(10-11),2082-2088.
MLA	Huang, Qiuping,et al."Characterization of Arsenic Ultra-Shallow Junctions in Silicon Using Photocarrier Radiometry and Spectroscopic Ellipsometry".INTERNATIONAL JOURNAL OF THERMOPHYSICS 33.10-11(2012):2082-2088.