Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 光电技术研究所被WoS收录文章

	Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers
	Ren Sheng-Dong 1,2; Li Bin-Cheng 1; Gao Li-Feng 1; Wang Qian 1,2
刊名	CHINESE PHYSICS B
	2013-05-01
卷号	22 期号:5
关键词	photocarrier radiometry ion implantation effective lifetime silicon
英文摘要	A combined frequency-swept and quasi-time-domain photocarrier radiometry (PCR) technique was developed to characterize thermally annealed silicon wafers with B+, P+, and As+ ion implantation at doses ranging from 1x10(11) cm(-2) to 1x10(16) cm(-2). The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.
WOS标题词	Science & Technology ; Physical Sciences
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
关键词[WOS]	LIGHT-EMITTING-DIODES ; DISLOCATION LOOPS ; BORON ; DIFFUSION ; SI
收录类别	SCI
语种	英语
WOS记录号	WOS:000319498300072
公开日期	2015-12-24
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/1184]
专题	光电技术研究所_光电技术研究所被WoS收录文章
作者单位	1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Ren Sheng-Dong,Li Bin-Cheng,Gao Li-Feng,et al. Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers[J]. CHINESE PHYSICS B,2013,22(5).
APA	Ren Sheng-Dong,Li Bin-Cheng,Gao Li-Feng,&Wang Qian.(2013).Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers.CHINESE PHYSICS B,22(5).
MLA	Ren Sheng-Dong,et al."Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers".CHINESE PHYSICS B 22.5(2013).