Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption

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	Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption
	Li, Bincheng 1; Huang, Qiuping 1,2; Ren, Shengdong 1,2
刊名	INTERNATIONAL JOURNAL OF THERMOPHYSICS
	2013-09-01
卷号	34 期号:8-9 页码:1735-1745
关键词	Electronic transport properties Free carrier absorption Ion implantation Photocarrier radiometry Silicon Thermal annealing
英文摘要	A combined photocarrier radiometry (PCR) and free carrier absorption (FCA) technique was employed to evaluate the electronic transport properties (carrier lifetime , diffusion coefficient , and the front surface recombination velocity of silicon wafers and to monitor the ion implantation and thermal annealing processes in the semiconductor manufacturing. For non-implanted silicon wafers, the experimental results showed that the accuracy of the simultaneous determination of the transport properties was greatly improved by fitting simultaneously the measured PCR and FCA signals to the theoretical models via a multi-parameter fitting procedure. For As ion implanted and thermal annealed silicon wafers, the results showed that both PCR and FCA amplitudes increased monotonically with the increasing implantation dose ( cm to cm, the decreasing implantation energy (20 keV to 140 keV), and the increasing annealing temperature (500 C to 1000 C), respectively. To explain the dependences of the PCR signals on the implantation and annealing parameters, a multi-wavelength PCR technique was proposed to extract the electronic transport properties of the implanted and annealed wafers. The results showed that ion implantation and thermal annealing caused significant decreases of the minority carrier lifetime and diffusion coefficient of the implantation layer, as well as the recombination velocity at the front surface. All three parameters decreased with the increasing implantation dose.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
研究领域[WOS]	Thermodynamics ; Chemistry ; Mechanics ; Physics
关键词[WOS]	ROOM-TEMPERATURE ; DEPENDENCE ; LIFETIMES ; ACCURACY ; BULK
收录类别	SCI
语种	英语
WOS记录号	WOS:000325815500047
公开日期	2015-12-24
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/1167]
专题	光电技术研究所_光电技术研究所被WoS收录文章
作者单位	1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Chengdu, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Li, Bincheng,Huang, Qiuping,Ren, Shengdong. Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2013,34(8-9):1735-1745.
APA	Li, Bincheng,Huang, Qiuping,&Ren, Shengdong.(2013).Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption.INTERNATIONAL JOURNAL OF THERMOPHYSICS,34(8-9),1735-1745.
MLA	Li, Bincheng,et al."Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption".INTERNATIONAL JOURNAL OF THERMOPHYSICS 34.8-9(2013):1735-1745.