InGaAs-MSM photodetector with low dark current

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 条纹相机工程中心

	InGaAs-MSM photodetector with low dark current
	Yan, Xin; Wang, Tao; Yin, Fei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Xin, Li-Wei; Tian, Jin-Shou
刊名	guangzi xuebao/acta photonica sinica
	2015-06-01
卷号	44 期号:6
其他题名	低暗电流ingaas-msm光电探测器
英文摘要	msm (mental-semiconductor-mental) photodetector has been widely used for its low capacitance and high bandwidth. for example, it can be used for space communication, remote sense and so on. but the development of msm devices is still hindered by the dark current. in this paper, the 100×100 μm2 ingaas-msm photodetector is successfully fabricated. the dark current density is reduced to 0.6 pa/μm2 (5 v) by designing inalgaas/ingaas short period superlattices and inalas schottky barrier enhancement and this improves the snr. parameters of the device are characterized as follows: the 3db bandwidth is 6.8 ghz, the rise time is 58.8 ps, the responsibility is 0.55 a/w at 1550 nm and the external quantum efficiency of the absorption region is 88%. inhibition mechanisms of the short period superlattices and schottky barrier enhancement are analyzed. ©, 2015, chinese optical society. all right reserved.
收录类别	EI
语种	中文
公开日期	2015-12-08
内容类型	期刊论文
源URL	[http://ir.opt.ac.cn/handle/181661/27267]
专题	条纹相机工程中心
推荐引用方式 GB/T 7714	Yan, Xin,Wang, Tao,Yin, Fei,et al. InGaAs-MSM photodetector with low dark current[J]. guangzi xuebao/acta photonica sinica,2015,44(6).
APA	Yan, Xin.,Wang, Tao.,Yin, Fei.,Ni, Hai-Qiao.,Niu, Zhi-Chuan.,...&Tian, Jin-Shou.(2015).InGaAs-MSM photodetector with low dark current.guangzi xuebao/acta photonica sinica,44(6).
MLA	Yan, Xin,et al."InGaAs-MSM photodetector with low dark current".guangzi xuebao/acta photonica sinica 44.6(2015).