Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2014专题

	Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors
	Liu, Yang Hui ; Zhu, Li Qiang ; Shi, Yi ; Wan, Qing
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	104 期号:13
中文摘要	Solution-processed sodium alginate electrolyte film shows a high proton conductivity of similar to 5.5 x 10(-3) S/cm and a high lateral electric-double-layer (EDL) capacitance of similar to 2.0 mu F/cm(2) at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2cm(2) V(-1)s(-1), 2.8 x 10(6), and 130mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors. (C) 2014 AIP Publishing LLC.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/11898]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Liu, Yang Hui,Zhu, Li Qiang,Shi, Yi,et al. Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors[J]. APPLIED PHYSICS LETTERS,2014,104(13).
APA	Liu, Yang Hui,Zhu, Li Qiang,Shi, Yi,&Wan, Qing.(2014).Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors.APPLIED PHYSICS LETTERS,104(13).
MLA	Liu, Yang Hui,et al."Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors".APPLIED PHYSICS LETTERS 104.13(2014).