Improvement of the SiOx Passivation Layer for High-Efficiency Si/PEDOT:PSS Heterojunction Solar Cells

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2014专题

	Improvement of the SiOx Passivation Layer for High-Efficiency Si/PEDOT:PSS Heterojunction Solar Cells
	Sheng, Jiang ; Fan, Ke ; Wang, Dan ; Han, Can ; Fang, Junfeng ; Gao, Pingqi ; Ye, Jichun
刊名	ACS APPLIED MATERIALS & INTERFACES
	2014
卷号	6 期号:18 页码:16027
中文摘要	Interfacial properties currently hinder the performance of Si/organic heterojunction solar cells for an alternative to high-efficiency and low-cost photovoltaics. Here, we present a simple and repeatable wet oxidation method for developing the surface passivation layer, SiOx, on the Si surface for the fabrication of high-efficiency Si/poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) heterojunction solar cells. The uniform and dense SiOx thin layer introduced by the oxidizing aqueous solution of H2O2 or HNO3 provided the better surface passivation and stronger wettability of the Si surface, compared to those in the native oxide case. These two types of progress helped create a lower defect density at the Si/PEDOT:PSS interface and thus a high-quality p-n junction with a lower interface recombination velocity. As a result, the HNO3-oxidized device displayed better performance with a power conversion efficiency (PCE) of 11%, representing a 28.96% enhancement from the PCE of 8.53% in the native oxide case. The effects on the performance of the Si/PEDOT:PSS hybrid solar cells of the wet oxidation treatment procedure, including the differences in surface roughness and wettability of the Si substrate, the quality and thickness of the SiOx, etc., were explored extensively. Such a simple and controllable oxidizing treatment could be an effective way to promote the interfacial properties that are an important cornerstone for more efficient Si/organic hybrid solar cells.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/11750]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Sheng, Jiang,Fan, Ke,Wang, Dan,et al. Improvement of the SiOx Passivation Layer for High-Efficiency Si/PEDOT:PSS Heterojunction Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2014,6(18):16027.
APA	Sheng, Jiang.,Fan, Ke.,Wang, Dan.,Han, Can.,Fang, Junfeng.,...&Ye, Jichun.(2014).Improvement of the SiOx Passivation Layer for High-Efficiency Si/PEDOT:PSS Heterojunction Solar Cells.ACS APPLIED MATERIALS & INTERFACES,6(18),16027.
MLA	Sheng, Jiang,et al."Improvement of the SiOx Passivation Layer for High-Efficiency Si/PEDOT:PSS Heterojunction Solar Cells".ACS APPLIED MATERIALS & INTERFACES 6.18(2014):16027.