Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates

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	Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates
	Wu, Guodong ; Wan, Xiang ; Yang, Yi ; Jiang, Shuanghe
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2014
卷号	47 期号:49
中文摘要	For conventional thin-film transistors (TFTs), bottom-gate or top-gate configuration is always adopted because the channel current is generally controlled by vertical capacitive coupling. In this article, depending on huge lateral electric-double-layer (EDL) capacitor induced by spatial movement of protons in phosphosilicate glass (PSG) solid electrolyte dielectrics, coplanar-gate indium-zinc-oxide (IZO)-TFTs based on the lateral capacitive coupling were fabricated on bare paper substrates. The PSG solid electrolyte films here were used at the same time as gate dielectrics and smooth buffer layers. These TFTs showed a low-voltage operation of only 1 V with a large field-effect mobility of 13.4 cm(2) V-1.s, a high current on/off ratio of 6 x 10(6) and a small subthreshold swing of 75 mV/decade. Furthermore, with introducing another coplanar gate, AND logic operation was also demonstrated on the coplanar dual-gate TFTs. These simple lateral-coupling coplanar-gate IZO-TFTs on bare paper substrates are very promising for low-cost portable sensors and bio-electronics.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/11649]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Wu, Guodong,Wan, Xiang,Yang, Yi,et al. Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2014,47(49).
APA	Wu, Guodong,Wan, Xiang,Yang, Yi,&Jiang, Shuanghe.(2014).Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates.JOURNAL OF PHYSICS D-APPLIED PHYSICS,47(49).
MLA	Wu, Guodong,et al."Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates".JOURNAL OF PHYSICS D-APPLIED PHYSICS 47.49(2014).