Bi-doped BaF2 crystal for broadband near-infrared light source
Ruan J(阮健) ; Su LB(苏良碧) ; Qiu JR(邱建荣) ; Chen DP(陈丹平) ; Xu J(徐军)
刊名opt. express
2009
卷号17期号:7页码:5163
关键词OPTICAL AMPLIFICATION SILICA GLASS BISMUTH EMISSION LUMINESCENCE FIBERS AMPLIFIERS MGF2
ISSN号1094-4087
中文摘要bi-doped baf2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. the absorption, emission and excitation spectra were measured at room temperature. two broadband emissions centered at 1070 and 1500 nm were observed in bi-doped baf2 crystal. this extraordinary luminescence should be ascribed to bi-related centers at distinct sites. we suggest bi2+ or bi+ centers adjacent to f vacancy defects are the origins of the observed nir emissions. (c) 2009 optical society of america
学科主题激光技术;激光物理与基本理论
资助信息national natural science foundation of china [50672087, 60778039, 60878041]; national basic research program of china [2006cb806000]; national high technology program of china [2006aa03z304]; shanghai natural science foundation [08zr1421700]; program for
语种英语
公开日期2009-09-18 ; 2010-10-12
内容类型期刊论文
源URL[http://ir.siom.ac.cn/handle/181231/624]  
专题上海光学精密机械研究所_强场激光物理国家重点实验室
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GB/T 7714
Ruan J,Su LB,Qiu JR,et al. Bi-doped BaF2 crystal for broadband near-infrared light source[J]. opt. express,2009,17(7):5163, 5169.
APA 阮健,苏良碧,邱建荣,陈丹平,&徐军.(2009).Bi-doped BaF2 crystal for broadband near-infrared light source.opt. express,17(7),5163.
MLA 阮健,et al."Bi-doped BaF2 crystal for broadband near-infrared light source".opt. express 17.7(2009):5163.
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