Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals

	Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals
	Zheng M(郑明); Zhu QX(朱秋香); Li XY(李雪艳); Yang MM(杨明敏); 99; Li XM(李效民); Shi X(史迅); Luo HS(罗豪甦); Zheng RK(郑仁奎)
刊名	J. Appl. Phys.
	2014
卷号	116 期号:11 页码:113911-1
学科主题	无机非金属材料
语种	英语
WOS记录号	WOS:000342837000035
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/5915]
专题	上海硅酸盐研究所_能量转换材料重点实验室_期刊论文
推荐引用方式 GB/T 7714	Zheng M,Zhu QX,Li XY,et al. Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals[J]. J. Appl. Phys.,2014,116(11):113911-1.
APA	Zheng M.,Zhu QX.,Li XY.,Yang MM.,99.,...&Zheng RK.(2014).Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals.J. Appl. Phys.,116(11),113911-1.
MLA	Zheng M,et al."Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals".J. Appl. Phys. 116.11(2014):113911-1.