CCD(charge coupled device) is the critical device in the satellite of weather forecast, astronomy, earth observation, navigation, and so on. Due to the complex radiation environment consist of Galactic cosmic rays, solar particles, and proton or electron from earth capture belts, the radiation effects induced by radiation environment will affect CCD, rusulting in CCD performance degradation gradually with the working hours of satellites in orbit, also the effective life of satellite. Because The optical system with high reliability and long life is always the pursuit of space missions, CCD space radiation environment adaptability and tolerance has become a international hot research field. Due to the high sensitivity of CCD, it is a difficult point of space radiation effects study that the sensitivity of defects caused by radiation in CCD. On the basis of the research results acqured for CCD radiation effects so far, the critical parameters of CCD are high radiation effects sensitivity, such as dark signal, charge transfer efficiency, and so on. The cause of CCD parameters degradation induced by radiation could be represented on the previous research on radiation effects of microelectronic devices. The effects of total ionizing dose took more thorough understanding, and the relevant technology, construction and CCD’s operating mode for effective suppression of radiation damage were suggested. But the displacement damage parameter degradation mechanism of CCD is still in the exploratory stage. The qualitative explanations and prediction differ greatly with the experimental results(typically a factor of 2), and the understanding about displacement damage is not perfect. Therefore, in order to reduce the effects of displacement damage, it’s impotant significance to raise the characterization mothod and parameters degradation mechanism of displacement damage in CCD. Base on the previous study results, this paper investigates the damage mechanism of CCD induced by ionizing and displacement radiation, and analyzes the property degradation mechanism induced by proton incidence by comparing the CCDs’ parameters degradation generated by incident 60Co-gamma ray and proton. This paper points out alse the effectiveness and limitation of the calculation method base on non-ionizing energy loss. For the first time the new method of separating displacement defects was proposed. The displacement damage was separated from the parameters degradation of CCD exposed to proton according to the comparison between the ionization damage and displacement damage. This paper pointed out that the CCD parameters change caused by displacement defects reflect the different influences of defects of various nature. Benefit from the current theoretical research of space radiation effects of semiconductor devices, it could be ignored that the specific nature of individual defects, and investigation was focused on the defect behavior. Following the progress of test and analysis method, for the first time the spectral response change of CCD induced by radiation were analyzed, and the CCD spectrum changes in different types of rays. The influencing mechanism of radiation on CCD saturation output voltage was found through the relationship of output unit and circuit degradation of CCD. At the same time, The comparison between different parameters was carried out, and the results show that the the displacement and ionizing radiation damage have similarity in the foundation of cumulative radiation effects, both can be used to describe the damage of CCD. Different parameters of the displacement damage degradation in large time scales has a good consistency (ignoring the test in detail, only consider the overall changes before and after irradiation), showing that defects in bulk Si induced different parameters shift have the same type or the same nature, namely it is possible to simplify the complex displacement damage defects through the defect level and non ionizing