InGaAs quantum well materials have many unique advantages in terms of low dark current, long life of photo-induced carriers and high quantum efficiency which makes promising prospects in spatial infrared photoelectric devices. InGaAs material have been widely used in electronics, optoelectronic devices and short wave infrared detector due to its excellent optical and electrical properties. Along with the rapid development of aerospace science and technology, the infrared quantum well imagers and quantum well lasers which are based on the InGaAs quantum well materials are already applied in aerospace engineering. Under the influence of space radiation environment, the performances of optoelectronic devices would be degraded or even failed. In addition, some new properties of InGaAs quantum well materials (such as quantum confinement effects of quantum well structures) can inevitably brought new problems of radiation damage effects. Therefore, it is imperative to study the radiation damage effects of InGaAs/InP quantum well materials, in order to provide support for the development of new optoelectronic devices and new space technologies. In recent years, radiation damage effects of InGaAs/InP quantum well optoelectronic materials and devices have been studied intensively. Lots of research works are focused on the radiation damage effects of quantum detectors, quantum well lasers and quantum solar cells. The main research approaches are irradiation experiments with different irradiation sources in terms of electrons, protons and heavy particles. Referring to the domestic research results, the study on radiation damage effects of InGaAs/InP quantum well optoelectronic materials and devices is still on its early stage. The purpose of this thesis is investigating the radiation damage effects and mechanisms of InGaAs/InP quantum well materials based on experimental and theoretical methods of quantum well optoelectronic materials and semiconductor radiation physics. Irradiation experiments on InGaAs/InP quantum well structures were carried out with electron accelerator, gamma source and proton accelerator. 1MeV and 1.8MeV electron beam have been applied in electron irradiation experiment. The photoluminescence (PL) spectra of the quantum well structure were measured before and after the irradiation with different fluences and dosages in order to study and analyze the effects of irradiation induced damages. Room temperature annealing after irradiation has been applied in order to study the dynamic characteristics of carriers. The gamma irradiation experiments were carried out with the Co-60 irradiation source with different irradiation doses. In proton irradiation experiments, we select two proton energies: 3MeV and 10MeV. By PL measurement, the relationship between PL intensity and irradiation doses of gamma and proton was obtained and analyzed. In summary, the irradiation effects on optical properties of InGaAs/InP quantum well and bulk structure have been studied by using different irradiation sources, such as, electron, gamma-ray, and proton, with different fluences and dosages. By comparing the photoluminescence spectra of samples before and after the irradiation, the radiation induced defects and the properties of photo-induced carriers in the quantum well structures were studied. The results of this research work can provide theoretical and experimental supports in future studies of same kind of research fields