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题名	SiGe HBT单粒子效应敏感区域分布与加固设计研究
作者	李培
学位类别	硕士
答辩日期	2015-05-29
授予单位	中国科学院大学
授予地点	北京
导师	郭红霞
关键词	不同结构SiGe HBT 单粒子效应 三维数值模拟仿真 激光微束试验 伪集电极加固
学位专业	微电子学与固体电子学
中文摘要	随着我国信息技术和航天事业的迅猛发展，对电子元器件在空间环境中的应用，特别是辐射、低温环境中的应用需求迫切。SiGe HBT由于其硅基能带工程材料和器件结构的优势，具有卓越的低温特性和优异的抗总剂量辐照性能，有可能替代并去掉体硅器件携带的保温装置，进而降低发射成本。然而相关研究表明，SiGe HBT对单粒子效应非常敏感，表现在导致器件发生单粒子效应的重离子LET阈值很低和较高的饱和截面，成为制约其空间应用的关键因素，因此迫切需要开展SiGe HBT单粒子效应抗辐射加固技术研究。首先，基于两种不同结构SiGe HBT的器件工艺与布局信息分别建立单粒子效应三维物理模型，并开展单粒子效应数值模拟仿真，对比分析STI（浅沟槽隔离结构）与DTI（深沟槽隔离结构）SiGe HBT在单粒子效应过程中器件内部电势、各电极瞬态电流及电荷收集随时间的变化关系，探讨两种结构SiGe HBT的敏感区域分布，总结出不同结构SiGe HBT的单粒子效应规律。其次，开展两种结构SiGe HBT的激光微束单粒子效应模拟试验，对比分析两种结构的瞬态电流峰值、电荷收集情况。激光微束密集扫描器件得到SiGe HBT的单粒子效应敏感区域三维定位，确定STI与DTI隔离结构SiGe HBT的激光微束单粒子效应响应规律与敏感区域分布。最后，根据STI隔离结构SiGe HBT的单粒子效应辐射损伤机理，初步给出了单粒子效应加固设计方法，通过在器件版图布局中引入伪集电极进行单粒子效应的抗辐射加固，分别开展加固前后SiGe HBT的单粒子效应仿真，对比加固前后SiGe HBT的单粒子响应，分析伪集电极对电荷收集机制的影响，验证SiGe HBT单粒子效应的设计抗辐射加固效果。 本文从数值模拟仿真的角度对比分析了不同结构SiGe HBT的关键电学参数在单粒子效应过程中的响应，探讨了不同结构器件的敏感区域分布，通过激光微束模拟试验对比分析了不同结构 SiGe HBT单粒子效应的瞬态电流与电荷收集情况，进一步验证了不同结构器件的敏感区域分布。总结研究结果，为SiGe HBT在空间极端环境中的实际应用及其抗辐射加固技术的研究提供了指导与支持。
英文摘要	With the rapid development of satellite, manned space flight and deep space exploration technology, semiconductor devices are used in extreme environments, especially in radiation and low temperature environment. SiGe HBT is a potential candidate for space applications because of its inherent robustness to total ionizing dose (TID) radiation. However，primarily due to charge collection through the collector-substrate (CS) junction and the relatively low substrate doping. SiGe HBTs are vulnerable to single event effects (SEE) because of new features of process and structure. Thus, SEE become a key factor in restricting space applications of SiGe HBTs. The Single-Event Response of the Silicon Germanium heterojunction bipolar transistors (SiGe HBT) were investigated by TCAD Simulations and laser microbeam experiment in this work. Constructing three-dimensional (3D) simulation models and carrying out further single event effects (SEE) simulations on the basis of SiGe HBT for STI and DTI structure, then together with the laser microbeam test to analyze the charge collection behavior, including the single event transient (SET) induced transient terminal currents, as well as the sensitive area of SEE charge collection. The simulations and experimental results are discussed in detail and it is demonstrated that the STI SiGe HBT is more sensitive then DTI SiGe HBT, and with larger CS junction. The SiGe HBT of DTI structure has a smaller CS junction，and the DTI structure restraining the charge collection. Combining the simulation and laser microbeam test and giving out the sensitive area and electrode of SiGe HBTs for STI and DTI structure in SEE. This paper also presents a SEE hardening approach that uses a dummy collector to reduce charge collection in the SiGe HBT. The dummy collector is obtained using the silicon space between adjacent HBTs. It is obtained without any process modification or area penalty. At first, we built simulation models for both normal and hardened SiGe HBTs, and then carry out SEE simulations respectively. The charge collection mechanism is obtained by analyzing of the transient current and charge collection changes on different ion incident position. Unlike the normal HBT, we can see that charge is continuously collected by the dummy CS junction. This causes more charge diffuse outward and reducing the charge available for collector terminal. For all ion incident positions, with hardening, the drift component of charge collection approximately the same, while the diffusion charge collection component is nearly completely compressed. During SEE, the CS junction either directly collects the deposited charges through drift within the potential funnel or indirectly collects charges after they arrive at the junction after diffusion. The diffusion length of the carriers is in the order of tens of microns or more. Hence a dummy CS junction should be able to reduce the amount of diffusive charge collection by the HBT collector. The actual charge collection of collector is effectively reduced. The Emitter and base charge collection is also decreased by the dummy collector to different extent. Dummy-collector has effectively mitigated the single event effects of SiGe HBT. The SEE sensitive area of SiGe HBTs is also effectively reduced by half. This work is carried out for the SiGe HBT circuit level radiation hardening design of single event effects
公开日期	2015-06-15
内容类型	学位论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/4249]
专题	新疆理化技术研究所_材料物理与化学研究室
作者单位	中国科学院新疆理化技术研究所
推荐引用方式 GB/T 7714	李培. SiGe HBT单粒子效应敏感区域分布与加固设计研究[D]. 北京. 中国科学院大学. 2015.

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