Limiting pump intensity for sulfur-doped gallium selenide crystals

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出

	Limiting pump intensity for sulfur-doped gallium selenide crystals
	Guo J. ; Li D. J. ; Xie J. J. ; Zhang L. M. ; Feng Z. S. ; Andreev Y. M. ; Kokh K. A. ; Lanskii G. V. ; Potekaev A. I. ; Shaiduko A. V. ; Svetlichnyi V. A.
刊名	Laser Physics Letters
	2014
卷号	11 期号:5 页码:6
ISSN号	ISBN/1612-2011
英文摘要	High optical quality undoped and sulfur-doped gallium selenide crystals were grown from melts by the modified vertical Bridgman method. Detailed study of the damage produced under femtosecond pulse exposure has shown that evaluation of the damage threshold by visual control is unfounded. Black matter spots produced on crystal surfaces do not noticeably decrease either its transparency or its frequency conversion efficiency as opposed to real damage identified as caked well-cohesive gallium structures. For the first time it was demonstrated that optimally sulfur-doped gallium selenide crystal possesses the highest resistivity to optical emission ( about four times higher in comparison with undoped gallium selenide).
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/44128]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Guo J.,Li D. J.,Xie J. J.,et al. Limiting pump intensity for sulfur-doped gallium selenide crystals[J]. Laser Physics Letters,2014,11(5):6.
APA	Guo J..,Li D. J..,Xie J. J..,Zhang L. M..,Feng Z. S..,...&Svetlichnyi V. A..(2014).Limiting pump intensity for sulfur-doped gallium selenide crystals.Laser Physics Letters,11(5),6.
MLA	Guo J.,et al."Limiting pump intensity for sulfur-doped gallium selenide crystals".Laser Physics Letters 11.5(2014):6.