Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy

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	Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy
	Liu, T ; Zhang, Y ; Cai, JW ; Pan, HY
刊名	SCIENTIFIC REPORTS
	2014
卷号	4
ISSN号	2045-2322
通讯作者	Cai, JW (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accelerated the development of next generation high-density non-volatile memories by utilizing perpendicular magnetic tunnel junctions (p-MTJs). However, the insufficient interfacial PMA in the typical Ta/CoFeB/MgO system will not only complicate the p-MTJ optimization, but also limit the device density scalability. Moreover, the rapid decreases of PMA in Ta/CoFeB/MgO films with annealing temperature higher than 300 degrees C will make the compatibility with CMOS integrated circuits a big problem. By replacing the Ta buffer layer with a thin Mo film, we have increased the PMA in the Ta/CoFeB/MgO structure by 20%. More importantly, the thermal stability of the perpendicularly magnetized (001) CoFeB/MgO films is greatly increased from 300 degrees C to 425 degrees C, making the Mo/CoFeB/MgO films attractive for a practical p-MTJ application.
资助信息	National Key Basic Research Program of China [2014CB921002]; National Natural Science Foundation of China [51171205, 11374349]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59705]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, T,Zhang, Y,Cai, JW,et al. Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy[J]. SCIENTIFIC REPORTS,2014,4.
APA	Liu, T,Zhang, Y,Cai, JW,&Pan, HY.(2014).Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy.SCIENTIFIC REPORTS,4.
MLA	Liu, T,et al."Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy".SCIENTIFIC REPORTS 4(2014).