Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms

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	Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms
	Chang, CZ ; Tang, PZ ; Wang, YL ; Feng, X ; Li, K ; Zhang, ZC ; Wang, YY ; Wang, LL ; Chen, X ; Liu, CX ; Duan, WH ; He, K ; Ma, XC ; Xue, QK
刊名	PHYSICAL REVIEW LETTERS
	2014
卷号	112 期号:5
ISSN号	0031-9007
通讯作者	Chang, CZ (reprint author), Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China.
中文摘要	With angle-resolved photoemission spectroscopy, gap opening is resolved at up to room temperature in the Dirac surface states of molecular beam epitaxy grown Cr-doped Bi2Se3 topological insulator films, which, however, show no long-range ferromagnetic order down to 1.5 K. The gap size is found decreasing with increasing electron-doping level. Scanning tunneling microscopy and first-principles calculations demonstrate that substitutional Cr atoms aggregate into superparamagnetic multimers in the Bi2Se3 matrix, which contribute to the observed chemical-potential-dependent gap opening in the Dirac surface states without long-range ferromagnetic order.
资助信息	National Natural Science Foundation of China; Ministry of Science and Technology of China; Chinese Academy of Sciences
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59591]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Chang, CZ,Tang, PZ,Wang, YL,et al. Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms[J]. PHYSICAL REVIEW LETTERS,2014,112(5).
APA	Chang, CZ.,Tang, PZ.,Wang, YL.,Feng, X.,Li, K.,...&Xue, QK.(2014).Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms.PHYSICAL REVIEW LETTERS,112(5).
MLA	Chang, CZ,et al."Chemical-Potential-Dependent Gap Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms".PHYSICAL REVIEW LETTERS 112.5(2014).