DEFECT PHYSICS AND INTRINSIC p-TYPE CONDUCTIVITY IN TOPOLOGICAL INSULATOR AuTlS2

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	DEFECT PHYSICS AND INTRINSIC p-TYPE CONDUCTIVITY IN TOPOLOGICAL INSULATOR AuTlS2
	Zhang, JM ; Feng, WX ; Yang, P ; Shi, LJ ; Zhang, Y
刊名	MODERN PHYSICS LETTERS B
	2014
卷号	28 期号:2
关键词	AuTlS2 defect physics p-type conductivity
ISSN号	0217-9849
通讯作者	Zhang, Y (reprint author), Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China.
中文摘要	Using first-principles calculations, we systematically investigate the defect physics in topological insulator AuTlS2. An optimal growth condition is explicitly proposed to guide for the experimental synthesis. The stabilities of various native point defects under different growth conditions and different carrier environments are studied in detail. We show that the p-type conductivity is strongly preferred in AuTlS2, and the band gap can be engineered by the control of intrinsic defects. Our results demonstrate that AuTlS2 is an ideal p-type topological insulator which can be easily integrated with traditional semiconductor.
资助信息	MOST Project of China [2014CB920903, 2011CBA00100]; NSF of China [11135001, 11174337, 11225418, 11374033, 11004009]; Specialized Research Fund for the Doctoral Program of Higher Education of China [20121101110046, 20131101120052]; Excellent Young Scholars Research Fund [2013CX04004]; Basic Research Fund of Beijing Institute of Technology [20121842009]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59331]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, JM,Feng, WX,Yang, P,et al. DEFECT PHYSICS AND INTRINSIC p-TYPE CONDUCTIVITY IN TOPOLOGICAL INSULATOR AuTlS2[J]. MODERN PHYSICS LETTERS B,2014,28(2).
APA	Zhang, JM,Feng, WX,Yang, P,Shi, LJ,&Zhang, Y.(2014).DEFECT PHYSICS AND INTRINSIC p-TYPE CONDUCTIVITY IN TOPOLOGICAL INSULATOR AuTlS2.MODERN PHYSICS LETTERS B,28(2).
MLA	Zhang, JM,et al."DEFECT PHYSICS AND INTRINSIC p-TYPE CONDUCTIVITY IN TOPOLOGICAL INSULATOR AuTlS2".MODERN PHYSICS LETTERS B 28.2(2014).