Perpendicular magnetic tunnel junction and its application in magnetic random access memory

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	Perpendicular magnetic tunnel junction and its application in magnetic random access memory
	Hou-Fang, L ; Ali, SS ; Xiu-Feng, H
刊名	CHINESE PHYSICS B
	2014
卷号	23 期号:7
关键词	magnetic random access memory perpendicular magnetic anisotropy spin transfer torque effect magnetic tunnel junction
ISSN号	1674-1056
通讯作者	Xiu-Feng, H (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L1(0)-ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au](N), and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
资助信息	State Key Project of Fundamental Research of Ministry of Science and Technology, China [2010CB934400]; National Natural Science Foundation of China [51229101, 11374351]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58993]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Hou-Fang, L,Ali, SS,Xiu-Feng, H. Perpendicular magnetic tunnel junction and its application in magnetic random access memory[J]. CHINESE PHYSICS B,2014,23(7).
APA	Hou-Fang, L,Ali, SS,&Xiu-Feng, H.(2014).Perpendicular magnetic tunnel junction and its application in magnetic random access memory.CHINESE PHYSICS B,23(7).
MLA	Hou-Fang, L,et al."Perpendicular magnetic tunnel junction and its application in magnetic random access memory".CHINESE PHYSICS B 23.7(2014).