Influence of defects in SiC (0001) on epitaxial graphene

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	Influence of defects in SiC (0001) on epitaxial graphene
	Guo, Y ; Guo, LW ; Lu, W ; Huang, J ; Jia, YP ; Sun, W ; Li, ZL ; Wang, YF
刊名	CHINESE PHYSICS B
	2014
卷号	23 期号:8
关键词	graphene silicon carbide defect
ISSN号	1674-1056
通讯作者	Guo, LW (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Res & Dev Ctr Funct Crystals, Beijing 100190, Peoples R China.
中文摘要	Defects in silicon carbide (SiC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC (0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG.
资助信息	National Key Basic Research Program of China [2011CB932700]; Knowledge Innovation Project of the Chinese Academy of Sciences [KJCX2-YW-W22]; National Natural Science Foundation of China [51272279, 51072223]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58984]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Guo, Y,Guo, LW,Lu, W,et al. Influence of defects in SiC (0001) on epitaxial graphene[J]. CHINESE PHYSICS B,2014,23(8).
APA	Guo, Y.,Guo, LW.,Lu, W.,Huang, J.,Jia, YP.,...&Wang, YF.(2014).Influence of defects in SiC (0001) on epitaxial graphene.CHINESE PHYSICS B,23(8).
MLA	Guo, Y,et al."Influence of defects in SiC (0001) on epitaxial graphene".CHINESE PHYSICS B 23.8(2014).