Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

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	Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
	Barate, P ; Liang, S ; Zhang, TT ; Frougier, J ; Vidal, M ; Renucci, P ; Devaux, X ; Xu, B ; Jaffres, H ; George, JM ; Marie, X ; Hehn, M ; Mangin, S ; Zheng, Y ; Amand, T ; Tao, B ; Han, XF ; Wang, Z ; Lu, Y
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	105 期号:1
ISSN号	0003-6951
通讯作者	Lu, Y (reprint author), CNRS Nancy Univ, Inst Jean Lamour, UMR 7198, BP 239, F-54506 Vandoeuvre Les Nancy, France.
中文摘要	An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy. The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (P-c) with the increase of annealing temperature, followed by a saturation of P-c beyond 350 degrees C annealing. Since the increase of P-c starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential for an optimal spin injection into semiconductor. (C) 2014 AIP Publishing LLC.
资助信息	France-China ANR-NSFC research project SISTER [ANR-11-IS10-0001, NNSFC 61161130527]; French ANR research project INSPIRE [ANR-10-BLAN-1014]; Chinese State Key Project of Fundamental Research of Ministry of Science and Technology (MOST) [2010CB934401]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58900]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Barate, P,Liang, S,Zhang, TT,et al. Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods[J]. APPLIED PHYSICS LETTERS,2014,105(1).
APA	Barate, P.,Liang, S.,Zhang, TT.,Frougier, J.,Vidal, M.,...&Lu, Y.(2014).Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods.APPLIED PHYSICS LETTERS,105(1).
MLA	Barate, P,et al."Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods".APPLIED PHYSICS LETTERS 105.1(2014).