Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

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	Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
	Du, CH ; Ma, ZG ; Zhou, JM ; Lu, TP ; Jiang, Y ; Zuo, P ; Jia, HQ ; Chen, H
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	105 期号:7
ISSN号	0003-6951
通讯作者	Chen, H (reprint author), Chinese Acad Sci, Beijing Natl Lab Condense Matter Phys, Beijing Key Lab New Energy Mat & Devices, Key Lab Renewable Energy,Inst Phys, Beijing 100190, Peoples R China.
中文摘要	We studied the effect of multiple interruptions during the quantum well growth on emission-efficiency enhancement of InGaN-based yellow-green light emitting diodes on c-plane sapphire substrate. The output power and dominant wavelength at 20 mA are 0.24 mW and 556.3 nm. High resolution x-ray diffraction, photoluminescence, and electroluminescence measurements demonstrate that efficiency enhancement could be partially attributed to crystal quality improvement of the active region resulted from reduced In clusters and relevant defects on the surface of InGaN layer by introducing interruptions. The less tilted energy band in the quantum well is also caused by the decrease of In-content gradient along c-axis resulted from In segregation during the interruptions, which increases spatial overlap of electron-hole wavefunction and thus the internal quantum efficiency. The latter also leads to smaller blueshift of dominant wavelength with current increasing. (C) 2014 AIP Publishing LLC.
资助信息	National High Technology Research and Development Program of China [2011AA03A112]; National Nature Science Foundation [11204360, 61210014, 11374340]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58892]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Du, CH,Ma, ZG,Zhou, JM,et al. Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption[J]. APPLIED PHYSICS LETTERS,2014,105(7).
APA	Du, CH.,Ma, ZG.,Zhou, JM.,Lu, TP.,Jiang, Y.,...&Chen, H.(2014).Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption.APPLIED PHYSICS LETTERS,105(7).
MLA	Du, CH,et al."Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption".APPLIED PHYSICS LETTERS 105.7(2014).