Planar Hall effect in Y3Fe5O12/IrMn films

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	Planar Hall effect in Y3Fe5O12/IrMn films
	Zhang, X ; Zou, LK
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	105 期号:26
ISSN号	0003-6951
通讯作者	Zhang, X (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	The planar Hall effect of IrMn on an yttrium iron garnet (YIG = Y3Fe5O12) was measured in the magnetic field rotating in the film plane. The magnetic field angular dependence of planar Hall resistance (PHR) was observed in YIG/IrMn bilayer at different temperatures, while the Gd3Ga5O12/IrMn film shows constant PHR for different magnetic field angles at both 10 K and 300 K. This provides evidence that IrMn has interfacial spins which can be led by ferrimagnetic layer in YIG/IrMn structure. A hysteresis can be observed in PHR-magnetic field angle loop of YIG/IrMn film at 10 K, indicative of the irreversible switching of IrMn interfacial spins at low temperature. (C) 2014 AIP Publishing LLC.
资助信息	National Natural Science Foundation of China [51171205]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58872]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, X,Zou, LK. Planar Hall effect in Y3Fe5O12/IrMn films[J]. APPLIED PHYSICS LETTERS,2014,105(26).
APA	Zhang, X,&Zou, LK.(2014).Planar Hall effect in Y3Fe5O12/IrMn films.APPLIED PHYSICS LETTERS,105(26).
MLA	Zhang, X,et al."Planar Hall effect in Y3Fe5O12/IrMn films".APPLIED PHYSICS LETTERS 105.26(2014).