Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

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	Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer
	Lu, TP ; Ma, ZG ; Du, CH ; Fang, YT ; Chen, FS ; Jiang, Y ; Wang, L ; Jia, HQ ; Chen, H
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2014
卷号	114 期号:4 页码:1055
ISSN号	0947-8396
通讯作者	Chen, H (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condense Matter Phys, Key Lab Renewable Energy,Beijing Key Lab New Ener, Beijing 100190, Peoples R China.
中文摘要	InGaN-based light-emitting diodes with graded indium composition p-type InGaN hole reservoir layer (HRL) are numerically investigated using the APSYS simulation software. It is found that by gradient increasing indium composition in growth direction of the p-InGaN HRL can improve light output power, lower current leakage and efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and optical characteristics are attributed mainly to tailoring energy band in p-n junction vicinal region, and finally enhanced the hole injection efficiency and electron blocking efficiency.
资助信息	National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106]; National Nature Science Foundation [11204360, 61210014]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58866]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Lu, TP,Ma, ZG,Du, CH,et al. Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2014,114(4):1055.
APA	Lu, TP.,Ma, ZG.,Du, CH.,Fang, YT.,Chen, FS.,...&Chen, H.(2014).Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,114(4),1055.
MLA	Lu, TP,et al."Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 114.4(2014):1055.