Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes

	Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes
	Ji, XL ; Wei, TB ; Yang, FH ; Lu, HX ; Wei, XC ; Ma, P ; Yi, XY ; Wang, JX ; Zeng, YP ; Wang, GH ; Li, JM
刊名	optics express
	2014
卷号	22 期号:9 页码:a1001-a1008
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26308]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Ji, XL,Wei, TB,Yang, FH,et al. Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes[J]. optics express,2014,22(9):a1001-a1008.
APA	Ji, XL.,Wei, TB.,Yang, FH.,Lu, HX.,Wei, XC.,...&Li, JM.(2014).Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes.optics express,22(9),a1001-a1008.
MLA	Ji, XL,et al."Efficiency improvement by polarization-reversed electron blocking structure in GaN-based light-emitting diodes".optics express 22.9(2014):a1001-a1008.