Controlled Synthesis of Phase-Pure InAs Nanowires on Si by Diminishing the Diameter to 10 nm

	Controlled Synthesis of Phase-Pure InAs Nanowires on Si by Diminishing the Diameter to 10 nm
	Pan, D ; Fu, MQ ; Yu, XZ ; Wang, XL ; Zhu, LJ ; Nie, SH ; Wang, SL ; Chen, Q ; Xiong, P ; von Molnar, S ; Zhao, JH
刊名	nano letters
	2014
卷号	14 期号:3 页码:1214-1220
学科主题	半导体物理
收录类别	SCI
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26326]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Pan, D,Fu, MQ,Yu, XZ,et al. Controlled Synthesis of Phase-Pure InAs Nanowires on Si by Diminishing the Diameter to 10 nm[J]. nano letters,2014,14(3):1214-1220.
APA	Pan, D.,Fu, MQ.,Yu, XZ.,Wang, XL.,Zhu, LJ.,...&Zhao, JH.(2014).Controlled Synthesis of Phase-Pure InAs Nanowires on Si by Diminishing the Diameter to 10 nm.nano letters,14(3),1214-1220.
MLA	Pan, D,et al."Controlled Synthesis of Phase-Pure InAs Nanowires on Si by Diminishing the Diameter to 10 nm".nano letters 14.3(2014):1214-1220.