Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature

	Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature
	Shang, ZJ ; Zheng, XH ; Yang, C ; Chen, Y ; Li, B ; Sun, L ; Tang, Z ; Zhao, DG
刊名	applied physics letters
	2014
卷号	105 期号:23 页码:232104
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2015-03-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/25993]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Shang, ZJ,Zheng, XH,Yang, C,et al. Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature[J]. applied physics letters,2014,105(23):232104.
APA	Shang, ZJ.,Zheng, XH.,Yang, C.,Chen, Y.,Li, B.,...&Zhao, DG.(2014).Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature.applied physics letters,105(23),232104.
MLA	Shang, ZJ,et al."Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature".applied physics letters 105.23(2014):232104.