Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 新疆维吾尔自治区电子信息材料与器件重点实验室

	Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas
	Zhang, Zhonghua; Song, Sannian; Song, Zhitang; Cheng, Yan; Zhu, Min; Li, Xiaoyun; Zhu, Yueqin; Guo, Xiaohui; Yin, Weijun; Wu, Liangcai
刊名	Applied Surface Science
	2014
卷号	311 期号:8 页码:68-73
关键词	Phase change material Ti-Sb-Te Etching ICP
ISSN号	1694332
中文摘要	The etching characteristics of new phase change material Ti 0.5Sb2Te3 (TST) were studied with the Cl 2/Ar or CF4/Ar gas mixture using inductively coupled plasmas system. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. Furthermore, X-ray photoelectron spectroscopy (XPS) compositional depth profiling was used to determine the surface degradation of etched TST using Cl2/Ar and CF4/Ar gas mixture. The etched TST shows a shift of the peaks related to Sb and Te to a higher energy for both etching gas, indicating the surface degradation of TST after etching. TST etched by Cl2 shows a thicker chloride layer remaining on the etched surface than fluorinate layer etched by CF4 owing to the higher reactivity. In the case of CF4, a thinner C-F polymer layer was observed on the etched surface, indicating lower etch rate due to the difficulty in making F diffusion into the TST through the C-F layer.
收录类别	SCI
公开日期	2014-11-11
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/3749]
专题	新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室
作者单位	Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China;Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Zhonghua,Song, Sannian,Song, Zhitang,et al. Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas[J]. Applied Surface Science,2014,311(8):68-73.
APA	Zhang, Zhonghua.,Song, Sannian.,Song, Zhitang.,Cheng, Yan.,Zhu, Min.,...&Zhou, Dong.(2014).Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas.Applied Surface Science,311(8),68-73.
MLA	Zhang, Zhonghua,et al."Etching of new phase change material Ti0.5Sb2Te3 by Cl-2/Ar and CF4/Ar inductively coupled plasmas".Applied Surface Science 311.8(2014):68-73.