Optical-electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation

	Optical-electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation
	Zhai Fengxiao(翟凤潇) ; Zuo Fangyuan(左方圆) ; Huang Huan(黄欢) ; Tianshu Lai (赖天树) ; Yiqun Wu(吴谊群) ; Fuxi Gan(干福熹)
刊名	journal of non-crystalline solids
	2010
期号	356 页码:889-892
合作状况	其它
学科主题	光学 ; 固体物理学 ; 光学材料
收录类别	其他
语种	中文
WOS记录号	WOS:000276714000009
公开日期	2011-04-14
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/7199]
专题	上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式 GB/T 7714	Zhai Fengxiao,Zuo Fangyuan,Huang Huan,et al. Optical-electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation[J]. journal of non-crystalline solids,2010(356):889-892.
APA	Zhai Fengxiao,Zuo Fangyuan,Huang Huan,Tianshu Lai ,Yiqun Wu,&Fuxi Gan.(2010).Optical-electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation.journal of non-crystalline solids(356),889-892.
MLA	Zhai Fengxiao,et al."Optical-electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation".journal of non-crystalline solids .356(2010):889-892.