Interaction of high intensity optical pulses with modified nonlinear GaSe crystals

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出 > 会议论文

	Interaction of high intensity optical pulses with modified nonlinear GaSe crystals
	Guo J. ; Xie J. ; Zhang L. ; Jiang K. ; Chen F. ; Andreev Y. M. ; Atuchin V. V. ; Kokh K. A. ; Lanskii G. V. ; Losev V. F. ; Shaiduko A. V.
	2013
会议名称	2nd International Symposium on Laser Interaction with Matter, LIMIS 2012, September 9, 2012 - September 12, 2012
会议地点	Xi'an, Shaanxi, China
英文摘要	The modified Bridgman method with heat field rotation was used to grow -polytype single crystals of pure and 1, 2 and 10 mass % S-doped GaSe or solid solution crystals GaSe1-xSx, x = 0.002, 0.091, 0.412. The interaction of ultrashort laser pulses of 100 fs duration at 800 nm and 2 m with the grown crystals was studied at room temperature. Up to 3.4-fold advantage of S-doped crystals in limit pump intensity (no decrease in the transmission) was found under 800 nm pump at S-content increase up to 10 mass %. The advantage became a half less at 2 m pump due to a decrease of two-photon absorption in pure GaSe crystals. The spectral dependence of transient absorption is recorded with 37 fs resolution and interpreted. It was ascertained that first observable damage of high quality crystals is caused by dissociation of submicrometer thick surface layer to initial elements and do not influence the frequency conversion efficiency until alloying of dissociated Ga. Local microdefects, multiphoton absorption and transient transmission processes are identified as key factors responsible for damage threshold. 2013 SPIE.
收录类别	EI
会议录	2nd International Symposium on Laser Interaction with Matter, LIMIS 2012, September 9, 2012 - September 12, 2012
会议录出版者	SPIE
会议录出版地	Xi'an, Shaanxi, China
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/40976]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Guo J.,Xie J.,Zhang L.,et al. Interaction of high intensity optical pulses with modified nonlinear GaSe crystals[C]. 见:2nd International Symposium on Laser Interaction with Matter, LIMIS 2012, September 9, 2012 - September 12, 2012. Xi'an, Shaanxi, China.