The room temperature ferromagnetism of the electrodeposited ZnCoO film after the ammine plasma treatment
Cao P. ; Bai Y.
2013
会议名称3rd International Conference on Intelligent Structure and Vibration Control, ISVC 2013, March 22, 2013 - March 24, 2013
会议日期March 22, 2013 - March 24, 2013
会议地点Chongqing, China
页码18-21
英文摘要Zinc oxide materials with outstanding performance are the broadband gap semiconductor, and make it a number of important subjects and a wide range of applications. In this paper, a Co-doped ZnO film grown by electrodeposition shows room-temperature ferromagnetic properties after the ammine plasma treatment. The XPS spectra show that the Co ions have a chemical valence of 2+ and a few nitrogen atoms was incorporated into ZnCoO film during the treatment process to occupy oxygen positions. The electronic properties also give evidence that nitrogen is incorporated into ZnCoO film. So the ferromagnetism is mediated though the p-d exchange interaction between nitrogen induced carriers and Co atoms. (2013) Trans Tech Publications, Switzerland.
收录类别EI
会议录3rd International Conference on Intelligent Structure and Vibration Control, ISVC 2013, March 22, 2013 - March 24, 2013
会议录出版者Trans Tech Publications Ltd
会议录出版地Chongqing, China
内容类型会议论文
源URL[http://ir.ciomp.ac.cn/handle/181722/40948]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
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Cao P.,Bai Y.. The room temperature ferromagnetism of the electrodeposited ZnCoO film after the ammine plasma treatment[C]. 见:3rd International Conference on Intelligent Structure and Vibration Control, ISVC 2013, March 22, 2013 - March 24, 2013. Chongqing, China. March 22, 2013 - March 24, 2013.
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