Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

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	Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode
	Deng R. ; Yao B. ; Li Y. F. ; Xu Y. ; Li J. C. ; Li B. H. ; Zhang Z. Z. ; Zhang L. G. ; Zhao H. F. ; Shen D. Z.
刊名	Journal of Luminescence
	2013
期号	134
ISSN号	ISBN/0022-2313
英文摘要	The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of similar to 3.6 V and emits UV light upon putting a forward bias. The intensity of the UV emission increases as injection current increases from 0.5 to 3.5 mA, but the wavelength of the UV emission decreases from 404 to 387 nm. It is demonstrated that the UV emission comes from near band-edge radiative recombination of electron and hole in the ZnO layer. The mechanism of the UV electroluminescence is discussed in the present work. (c) 2012 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
公开日期	2014-05-14
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/40921]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Deng R.,Yao B.,Li Y. F.,et al. Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode[J]. Journal of Luminescence,2013(134).
APA	Deng R..,Yao B..,Li Y. F..,Xu Y..,Li J. C..,...&Shen D. Z..(2013).Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode.Journal of Luminescence(134).
MLA	Deng R.,et al."Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode".Journal of Luminescence .134(2013).