Mechanism of low energy S+ ion bombarded p-GaAs (100)

	Mechanism of low energy S+ ion bombarded p-GaAs (100)
	Zhao, Q. ; Zhai, G. J. ; Kwok, R. W. M.
刊名	Materials Letters
	2006
卷号	60 期号:25-26 页码:3084-3087
关键词	GaAs (100) surfaces semiconductors sulfur passivation ion implantation sulfide passivation gaas surfaces sulfur performance
ISSN号	0167-577X
通讯作者	北京8701信箱
英文摘要	X-ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) have been used to characterize the chemical structure and site location of sulfur atom on p-GaAs (100) treated by bombardment of low energy S+ ions over the range from 10 to 100 eV. S+ ion bombardment resulted in the formation of Ga-S and As-S species on GaAs surface. It was found that the S+ ions with energy above 50 eV were more effective in formation of Ga-S species, which assisted the GaAs (100) surface in reconstruction into an ordered (1 x 1) structure upon annealing. After taking into account physical damage due to the process of ion bombardment, we found that 50 eV was the optimal ion energy to form Ga-S species in the sulfur passivation of GaAs (100). The subsequent annealing process removed both donor and acceptor states that were introduced during the ion bombardment of GaAs, and resulted in a sharp (1 x 1) LEED pattern.
学科主题	空间技术
收录类别	SCI
原文出处	http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TX9-4JF95YR-3-9&_cdi=5585&_user=1999492&_orig=search&_coverDate=11%2F30%2F2006&_sk=999399974&view=c&wchp=dGLzVtb-zSkzk&md5=77f652923ed840eb25edfc734b259781&ie=/sdarticle.pdf
语种	英语
内容类型	期刊论文
源URL	[http://ir.cssar.ac.cn/handle/122/578]
专题	国家空间科学中心_空间技术部
推荐引用方式 GB/T 7714	Zhao, Q.,Zhai, G. J.,Kwok, R. W. M.. Mechanism of low energy S+ ion bombarded p-GaAs (100)[J]. Materials Letters,2006,60(25-26):3084-3087.
APA	Zhao, Q.,Zhai, G. J.,&Kwok, R. W. M..(2006).Mechanism of low energy S+ ion bombarded p-GaAs (100).Materials Letters,60(25-26),3084-3087.
MLA	Zhao, Q.,et al."Mechanism of low energy S+ ion bombarded p-GaAs (100)".Materials Letters 60.25-26(2006):3084-3087.