MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers

	MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers
	Zhang, Tiancheng ; Ni, Qinfei ; Liu, Xuezhen ; Yu, Bin ; Wang, Yuxia ; Zhang, Yu ; Ma, Xunpeng ; Wang, Yongbin ; Xu, Yun
刊名	key engineering materials
	2013
卷号	552 页码:389-392
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2014-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24814]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhang, Tiancheng,Ni, Qinfei,Liu, Xuezhen,et al. MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers[J]. key engineering materials,2013,552:389-392.
APA	Zhang, Tiancheng.,Ni, Qinfei.,Liu, Xuezhen.,Yu, Bin.,Wang, Yuxia.,...&Xu, Yun.(2013).MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers.key engineering materials,552,389-392.
MLA	Zhang, Tiancheng,et al."MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers".key engineering materials 552(2013):389-392.