Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

	Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method
	Yuan, L. ,Tao, L. ; Yu, H. ; Chen, W. ; Lu, D. ; Li, Y. ; Ran, G. ; Pan, J.
刊名	photonics technology letters
	2013
卷号	25 期号:12 页码:1180 - 1183
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2014-03-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24550]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yuan, L. ,Tao, L.,Yu, H.,Chen, W.,et al. Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method[J]. photonics technology letters,2013,25(12):1180 - 1183.
APA	Yuan, L. ,Tao, L..,Yu, H..,Chen, W..,Lu, D..,Li, Y..,...&Pan, J..(2013).Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method.photonics technology letters,25(12),1180 - 1183.
MLA	Yuan, L. ,Tao, L.,et al."Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method".photonics technology letters 25.12(2013):1180 - 1183.