Thermal stability and electrical properties of copper nitride with In or Ti

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	Thermal stability and electrical properties of copper nitride with In or Ti
	Du, Y ; Gao, L ; Li, CR ; Ji, AL
刊名	CHINESE PHYSICS B
	2013
卷号	22 期号:6
关键词	ternary nitride thin film thermal stability electrical properties
ISSN号	1674-1056
通讯作者	Ji, AL (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100190, Peoples R China.
中文摘要	Thin films of ternary compounds CuxInyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N, a material that decomposes below 300 degrees C, and thus promises many interesting applications in direct-writing. The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure, surface morphology, and temperature dependence of electrical resistivity. More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice. A small amount of In or Ti can improve the crystallinity, and consequently the surface morphology. While the decomposition temperature is rarely influenced by In, the Ti-doped sample, Cu59.31Ti2.64N38.05, shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks, even after annealing at 500 degrees C. Both In and Ti reduce the bandgap of the original Cu3N phase, resulting in a smaller electrical resistivity at room temperature. The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K. These results can be useful in improving the applicability of copper-nitride-based thin films.
资助信息	National Natural Science Foundation of China [51172272, 10904165, 11290161]; National Basic Research Program of China [2012CB933002]
语种	英语
公开日期	2014-01-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57591]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Du, Y,Gao, L,Li, CR,et al. Thermal stability and electrical properties of copper nitride with In or Ti[J]. CHINESE PHYSICS B,2013,22(6).
APA	Du, Y,Gao, L,Li, CR,&Ji, AL.(2013).Thermal stability and electrical properties of copper nitride with In or Ti.CHINESE PHYSICS B,22(6).
MLA	Du, Y,et al."Thermal stability and electrical properties of copper nitride with In or Ti".CHINESE PHYSICS B 22.6(2013).