Influence of the dynamic lattice strain on the transport behavior of oxide heterojunctions

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	Influence of the dynamic lattice strain on the transport behavior of oxide heterojunctions
	Wang, J ; Hu, FX ; Chen, L ; Zhao, YY ; Lu, HX ; Sun, JR ; Shen, BG
刊名	APPLIED PHYSICS LETTERS
	2013
卷号	102 期号:2
ISSN号	0003-6951
通讯作者	Wang, J (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China.
中文摘要	All-perovskite oxide heterojunctions composed of electron-doped titanate LaxSr1-xTiO3 (x = 0.1, 0.15) and hole-doped manganite La0.67Ca0.33MnO3 films were fabricated on piezoelectric substrate of (001)-0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT). Taking advantage of the excellent converse piezoelectric effect of PMN-PT, we investigated the influence of the dynamic lattice strain on transport properties of the heterojunctions by applying external bias electric fields on the PMN-PT substrate. Photovoltaic experiments were carried out to characterize the interfacial barrier of the heterojunction. A linear reduction in the barrier height was observed with the increase of the bias field applied on PMN-PT. The value of the barrier height reduces from similar to 1.55 (similar to 1.30) to 1.02 (1.08) eV as the bias field increases from 0 to 12 kV/cm for the junction of La0.10Sr0.9TiO3/La0.67Ca0.33MnO3 (La0.15Sr0.85TiO3/La0.67Ca0.33MnO3). The observed dependency of barrier height on external field can be ascribed to the increasing release of trapped carriers by strain modulation, which results in a suppression of the depletion layer and increases the opportunity for electron tunneling across the depletion area. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788731]
资助信息	National Basic Research program of China (973 program); National Natural Science Foundation of China; Hi-Tech Research and Development program of China; Key Research Program of the Chinese Academy of Sciences
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57115]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, J,Hu, FX,Chen, L,et al. Influence of the dynamic lattice strain on the transport behavior of oxide heterojunctions[J]. APPLIED PHYSICS LETTERS,2013,102(2).
APA	Wang, J.,Hu, FX.,Chen, L.,Zhao, YY.,Lu, HX.,...&Shen, BG.(2013).Influence of the dynamic lattice strain on the transport behavior of oxide heterojunctions.APPLIED PHYSICS LETTERS,102(2).
MLA	Wang, J,et al."Influence of the dynamic lattice strain on the transport behavior of oxide heterojunctions".APPLIED PHYSICS LETTERS 102.2(2013).