Effect of InxGa1-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

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	Effect of InxGa1-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
	Qian, WN ; Su, SC ; Chen, H ; Ma, ZG ; Zhu, KB ; He, M ; Lu, PY ; Wang, G ; Lu, TP ; Du, CH ; Wang, Q ; Wu, WB ; Zhang, WW
刊名	CHINESE PHYSICS B
	2013
卷号	22 期号:10
关键词	InGaN reciprocal space map indium incorporation surface morphology
ISSN号	1674-1056
通讯作者	Chen, H (reprint author), Chinese Acad Sci, Key Lab Renewable Energy, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys,Inst Phys, Beijing 100190, Peoples R China.
中文摘要	In this paper we report on the effect of an InxGa1-xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template. In our experiment, three types of buffer layers including constant composition, continuously graded composition, and the combination of constant and continuously graded composition are used. Surface morphologies, crystalline quality, indium incorporations, and relaxation degrees of InGaN epilayers with different buffer layers are investigated. It is found that the InxGa1-xN continuously graded buffer layer is effective to improve the surface morphology, crystalline quality, and the indium incorporation of the InGaN epilayer. These superior characteristics of the continuously graded buffer layer can be attributed to the sufficient strain release and the reduction of dislocations.
资助信息	National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106, 2013AA03A101]; National Natural Science Foundation of China [11204360, 61210014, 61078046]; Science & Technology Innovation Program of the Department of Education of Guangdong Province, China [2012CXZD0017]; Industry-Academia-Research Union Special Fund of Guangdong Province, China [2012B091000169]; Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund, China [2012B090600038]
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/56918]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Qian, WN,Su, SC,Chen, H,et al. Effect of InxGa1-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition[J]. CHINESE PHYSICS B,2013,22(10).
APA	Qian, WN.,Su, SC.,Chen, H.,Ma, ZG.,Zhu, KB.,...&Zhang, WW.(2013).Effect of InxGa1-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition.CHINESE PHYSICS B,22(10).
MLA	Qian, WN,et al."Effect of InxGa1-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition".CHINESE PHYSICS B 22.10(2013).