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Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature
Wu, JQ ; Liu, ZX ; Jiang, DS ; Sun, BQ
刊名CHINESE PHYSICS LETTERS
1999
卷号16期号:2页码:143
关键词GAAS-ALAS HETEROSTRUCTURES DOUBLE-BARRIER STRUCTURES SEMICONDUCTOR SUPERLATTICES TRANSPORT
ISSN号0256-307X
通讯作者Wu, JQ (reprint author), Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
中文摘要The behavior of room temperature self-sustained current oscillations resulting from sequential resonance tunneling in a doped weakly-coupled GaAs/AlAs superlattice (SL) is investigated under hydrostatic pressure. From atmosphere pressure to 6.5 kbar, oscillations exist in the whole plateau of the I-V curve and oscillating characteristics are affected by the pressure. When hydrostatic pressure is higher than 6.5 kbar, the current oscillations are completely suppressed although a current plateau still can be seen in the I-V curve. The plateau disappears when the pressure is close to 13.5 kbar. As the main effect of hydrostatic pressure is to lower the X point valley with respect to Gamma point valley, the disappearance of oscillation and the plateau shrinkage before Gamma - X resonance takes place are attributed to the increases of thermoionic emission and nonresonant tunneling components determined by the lowest Gamma - X barrier height in GaAs/AlAs SL structure.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/54140]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wu, JQ,Liu, ZX,Jiang, DS,et al. Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature[J]. CHINESE PHYSICS LETTERS,1999,16(2):143.
APA Wu, JQ,Liu, ZX,Jiang, DS,&Sun, BQ.(1999).Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature.CHINESE PHYSICS LETTERS,16(2),143.
MLA Wu, JQ,et al."Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature".CHINESE PHYSICS LETTERS 16.2(1999):143.
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