Structural study of GaSb, InSb melts with XAFS technique

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	Structural study of GaSb, InSb melts with XAFS technique
	Wang, YR ; Lu, KQ ; Li, CX
刊名	JOURNAL DE PHYSIQUE IV
	1997
卷号	7 期号:C2 页码:965
关键词	SIMULATION
ISSN号	1155-4339
通讯作者	Wang, YR (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603-30,BEIJING 100080,PEOPLES R CHINA.
中文摘要	The XAFS spectra of GaSb, InSb melts and the corresponding solids are measured at different temperatures. The reverse Monte Carlo simulation technique is applied to the analysis of EXAFS data of molten GaSb, InSb. The partial radial distribution functions of molten GaSb, InSb are given as well as the local atomic structure models which are based on a geometrical analysis of the model atomic configurations. A discussion about the mechanism of semiconductor-metal transition from solid to liquid is presented in the light of the local structure changes.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/53376]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, YR,Lu, KQ,Li, CX. Structural study of GaSb, InSb melts with XAFS technique[J]. JOURNAL DE PHYSIQUE IV,1997,7(C2):965.
APA	Wang, YR,Lu, KQ,&Li, CX.(1997).Structural study of GaSb, InSb melts with XAFS technique.JOURNAL DE PHYSIQUE IV,7(C2),965.
MLA	Wang, YR,et al."Structural study of GaSb, InSb melts with XAFS technique".JOURNAL DE PHYSIQUE IV 7.C2(1997):965.