Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

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	Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate
	Li, DB ; Dong, X ; Huang, JS ; Liu, XL ; Xu, ZY ; Wang, XH ; Zhang, Z ; Wang, ZG
刊名	JOURNAL OF CRYSTAL GROWTH
	2003
卷号	249 期号:1-2 页码:72
关键词	INXALYGA1-X-YN QUATERNARY ALLOYS TIME-RESOLVED PHOTOLUMINESCENCE MULTIPLE-QUANTUM WELLS ALINGAN/GAN HETEROSTRUCTURES GAN DECAY LUMINESCENCE SAPPHIRE DEVICES SILICON
ISSN号	0022-0248
通讯作者	Li, DB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, POB 912, Beijing 100083, Peoples R China.
中文摘要	Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/53250]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, DB,Dong, X,Huang, JS,et al. Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate[J]. JOURNAL OF CRYSTAL GROWTH,2003,249(1-2):72.
APA	Li, DB.,Dong, X.,Huang, JS.,Liu, XL.,Xu, ZY.,...&Wang, ZG.(2003).Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate.JOURNAL OF CRYSTAL GROWTH,249(1-2),72.
MLA	Li, DB,et al."Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate".JOURNAL OF CRYSTAL GROWTH 249.1-2(2003):72.