Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition

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	Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition
	Qin, Q ; Yu, NS ; Guo, LW ; Wang, Y ; Zhu, XL ; Chen, H ; Zhou, JM
刊名	ACTA PHYSICA SINICA
	2005
卷号	54 期号:11 页码:5450
关键词	PHONON DEFORMATION POTENTIALS LIGHT-EMITTING-DIODES OPTICAL-PROPERTIES PLANE SAPPHIRE OVERGROWN GAN ALPHA-GAN LAYERS SUBSTRATE ALN
ISSN号	1000-3290
通讯作者	Qin, Q (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China.
中文摘要	GaN epitaxial films were grown on c-face sapphire substrates by metalorganic chemical vapor deposition (MOCVD) with an in situ SiNx deposition inserted into the normal growth process. The in situ SiNx deposition makes a nanomask on GaN, followed by the epitaxial lateral overgrowth on it. Raman spectra and photoluminescence are used to study the stress state of the resulting GaN film. The formation of SiN, nanomask leads to a 2D-3D growth mode transition, which ends in the total coalesce of the GaN film. The distribution of stress state in this kind of GaN film is more uniform than that of films grown by the conventional epitaxial lateral overgrowth. The data about the relaxation of the stress deduced by the Raman spectra match well with those obtained by photoluminescence. These data also show that the more residual stress in the GaN film grown on the SiN, nanomask is relaxed when the time of in situ SiN, deposition is increased. This is because with the increasing time of in situ SiN, deposition, the wing area of epitaxial lateral overgrowth becomes larger, which will reduce the stress in the GaN thin film grown on it.
收录类别	SCI
语种	中文
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/52094]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Qin, Q,Yu, NS,Guo, LW,et al. Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition[J]. ACTA PHYSICA SINICA,2005,54(11):5450.
APA	Qin, Q.,Yu, NS.,Guo, LW.,Wang, Y.,Zhu, XL.,...&Zhou, JM.(2005).Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition.ACTA PHYSICA SINICA,54(11),5450.
MLA	Qin, Q,et al."Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition".ACTA PHYSICA SINICA 54.11(2005):5450.