Quantized Anomalous Hall Effect in Magnetic Topological Insulators

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	Quantized Anomalous Hall Effect in Magnetic Topological Insulators
	Yu, R ; Zhang, W ; Zhang, HJ ; Zhang, SC ; Dai, X ; Fang, Z
刊名	SCIENCE
	2010
卷号	329 期号:5987 页码:61
关键词	HGTE QUANTUM-WELLS SINGLE DIRAC CONE SEMICONDUCTORS TEMPERATURE REALIZATION SURFACE BI2TE3
ISSN号	0036-8075
通讯作者	Dai, X (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	The anomalous Hall effect is a fundamental transport process in solids arising from the spin-orbit coupling. In a quantum anomalous Hall insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically nontrivial electronic structure, leading to the quantized Hall effect without an external magnetic field. Based on first-principles calculations, we predict that the tetradymite semiconductors Bi2Te3, Bi2Se3, and Sb2Te3 form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in contrast to conventional dilute magnetic semiconductors where free carriers are necessary to mediate the magnetic coupling. In two-dimensional thin films, this magnetic order gives rise to a topological electronic structure characterized by a finite Chern number, with the Hall conductance quantized in units of e(2)/h (where e is the charge of an electron and h is Planck's constant).
收录类别	SCI
资助信息	National Science Foundation of China; 973 Program of China [2007CB925000, 2010CB923000]; International Science and Technology Cooperation Program of China; U.S. NSF [DMR-0904264]
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/51632]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yu, R,Zhang, W,Zhang, HJ,et al. Quantized Anomalous Hall Effect in Magnetic Topological Insulators[J]. SCIENCE,2010,329(5987):61.
APA	Yu, R,Zhang, W,Zhang, HJ,Zhang, SC,Dai, X,&Fang, Z.(2010).Quantized Anomalous Hall Effect in Magnetic Topological Insulators.SCIENCE,329(5987),61.
MLA	Yu, R,et al."Quantized Anomalous Hall Effect in Magnetic Topological Insulators".SCIENCE 329.5987(2010):61.