Optical properties of boron-doped Si nanowires

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	Optical properties of boron-doped Si nanowires
	Zeng, XB ; Liao, XB ; Wang, B ; Dai, ST ; Xu, YY ; Xiang, XB ; Hu, ZH ; Diao, HW ; Kong, GL
刊名	JOURNAL OF CRYSTAL GROWTH
	2004
卷号	265 期号:1-2 页码:94
关键词	SILICON NANOWIRES POROUS SILICON VISIBLE PHOTOLUMINESCENCE AMORPHOUS-SILICON RAMAN SPECTROSCOPY NANOSTRUCTURES EMISSION GROWTH FILMS
ISSN号	0022-0248
通讯作者	Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China.
中文摘要	Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The as-grown films were studied by atomic force microscope (AFM), High-resolution X-ray diffraction (XRD) and Hall measurements. The structural and electronic transport properties of the films were in-plane anisotropic. The formation mechanism of anisotropic properties was discussed. (C) 2004 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50328]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zeng, XB,Liao, XB,Wang, B,et al. Optical properties of boron-doped Si nanowires[J]. JOURNAL OF CRYSTAL GROWTH,2004,265(1-2):94.
APA	Zeng, XB.,Liao, XB.,Wang, B.,Dai, ST.,Xu, YY.,...&Kong, GL.(2004).Optical properties of boron-doped Si nanowires.JOURNAL OF CRYSTAL GROWTH,265(1-2),94.
MLA	Zeng, XB,et al."Optical properties of boron-doped Si nanowires".JOURNAL OF CRYSTAL GROWTH 265.1-2(2004):94.